Two-dimensional semiconductor materials, represented by transition metal dichalcogenides (TMDCs), have the characteristics of extreme thickness, high mobility, and back-end heterogeneous integration. They are expected to continue Moore's law and realize integrated circuits with three-dimensional architecture. and industry attention. After nearly a decade of development, two-dimensional electronics has made great progress, but there are still challenges in the preparation of large-area single crystals, key device processes, and compatibility with mainstream semiconductor technologies.
Dhírigh grúpa taighde an Oll. Xinran Wang ó Scoil na hEolaíochta Leictreonaí agus na hInnealtóireachta in Ollscoil Nanjing ar na fadhbanna thuas agus rinne siad taighde ar na cinn atá chun cinn sna príomhtheicneolaíochtaí de-déthoiseach monaraithe criostail shingil leathsheoltóra agus heitrea-. comhtháthú, a sholáthair smaointe nua maidir le forbairt ciorcaid iomlánaithe sa ré i ndiaidh-Moore. Foilsíodh torthaí taighde ábhartha in Nature Nanotechnology le déanaí.
Building "atomic terraces" down-to-earth, breaking through two-dimensional semiconductor single crystal epitaxy
Tá ábhair chriostail aonair leathsheoltóra mar bhunchloch an tionscail mhicrileictreonaic. I gcomparáid leis na sliseog sileacain mhonacriostalach príomhshrutha 12-orlach, tá ullmhú leathsheoltóra dháthoiseacha fós sa chéim{-scála beag agus ilchriostalach. Is é an chéad chéim i dtreo chiorcad iomlánaithe dháthoiseacha ná scannáin thana mhonacriostalánacha mhóra, ardcháilíochta a fhorbairt. . Mar sin féin, le linn fás ábhar dháthoiseach, gintear na milliúin sliseanna micreascópacha go randamach, agus ní féidir ábhar aonchriostail monolithic a fháil ach trí na sliseanna go léir a rialú chun treo comhshocraithe docht comhsheasmhach a choinneáil.
Sapphire is a widely used substrate in the semiconductor industry and has outstanding advantages in mass production, low cost and process compatibility. The collaborating team proposed a scheme to artificially construct atomic-scale "terraces" by changing the direction of the atomic steps on the sapphire surface. The directional growth of TMDCs was achieved by the directional induced nucleation mechanism of "atomic terraces".
Based on this principle, the team achieved the epitaxial growth of a 2-inch MoS2 single crystal film for the first time in the world. Thanks to the improvement of material quality, the mobility of field effect transistors based on MoS2 single crystal is as high as 102.6 cm2/Vs, and the current density reaches 450 μA/μm, which is one of the highest comprehensive performances reported internationally. At the same time, the technology has good universality and is suitable for the preparation of single crystals of other materials such as MoSe2. This work has laid a material foundation for the application of TMDC in the field of integrated circuits.
Ag breathnú suas ar na réaltaí, tugann dhá leathsheoltóir solas don teicneolaíocht taispeána amach anseo
Mar gheall ar dhul chun cinn na n-ábhar criostail mhóra singil-is féidir leathsheoltóirí dháthoiseacha a chur i bhfeidhm. Sa dara saothar, bunaithe ar bhlianta de charnadh taighde leathsheoltóra tríú glúin, in éineacht leis an réiteach criostail aonair leathsheoltóra déthoiseach is déanaí, mhol foireann chomhoibritheach Scoil na Leictreonaic ultrafhuaime monolithic comhtháite. -taispeántas Micrimhilseogra ardtaifigh-bunaithe ar chiorcad tiománaí trasraitheora scannán tanaí MoS2. Réitigh theicniúla.
Tagraíonn micrea-LED do theicneolaíocht a úsáideann soilse ar scála miocrón mar aonaid picteilín astaithe solais agus a chóimeálann le modúil tiomána iad chun eagar taispeána ard-dlúis a chruthú. I gcomparáid leis na teicneolaíochtaí taispeána príomhshrutha atá ann faoi láthair ar nós LCD agus OLED, tá buntáistí tras-ghlúin ag Micro LED i dtéarmaí gile, réiteach, tomhaltas fuinnimh, saol seirbhíse, luas freagartha agus cobhsaíocht theirmeach, agus aithnítear go hidirnáisiúnta an chéad cheann eile-. {4}}teicneolaíocht taispeána giniúna.
Mar sin féin, tá go leor dúshlán fós le sárú ag tionsclaíocht Micrimhilseogra LED. Ar an gcéad dul síos, tá sé deacair ceanglais tiomána na n-aonad taispeána ard-dlúis i méideanna beaga a mheaitseáil. Ar an dara dul síos, tá sé deacair ag an teicneolaíocht aistrithe mais a bhfuil tóir uirthi sa tionscal freastal ar riachtanais forbartha taispeántais ardtaifigh i dtéarmaí costais agus toraidh. Go háirithe i gcás feidhmchláir ultra-ardtaifigh amhail AR/VR, ní hamháin go gcaithfidh an taifeach a bheith níos mó ná 3000PPI, ach ní mór minicíocht freagartha níos tapúla a bheith ag na picteilíní taispeána freisin.
The cooperative team aimed at the field of high-resolution micro-display, and proposed a technical solution for the 3D monolithic integration of MoS2 thin-film transistor driver circuit and GaN-based Micro LED display chip. The team developed a non-"massive transfer" low-temperature monolithic heterogeneous integration technology, using a nearly non-destructive large-size two-dimensional semiconductor TFT manufacturing process, to achieve a high-brightness, high-resolution microdisplay of 1270 PPI, which can meet the needs of future microdisplays. Display, vehicle display, visible light communication and other cross-field applications.
Among them, compared with the traditional two-dimensional semiconductor device process, the new process developed by the team improves the performance of thin film transistors by more than 200 percent , reduces the difference by 67 percent , and the maximum driving current exceeds 200 μA/μm, which is better than IGZO, LTPS and other commercial materials. It shows the huge application potential of two-dimensional semiconductor materials in the display driving industry. This work is the first in the world to integrate two emerging technologies of high-performance two-dimensional semiconductor TFT and Micro LED, which provides a new technical route for the future development of Micro LED display technology.
The above works are respectively named "Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire" (corresponding authors are Prof. Wang Xinran and Prof. Wang Jinlan of Southeast University) and "Three dimensional monolithic Micro LED display driven by atomically-thin transistor matrix" (corresponding authors). It was published online in Nature Nanotechnology recently.
This series of work has been supported by projects such as Jiangsu Province's Frontier Leading Technology Basic Research Project, the National Natural Science Foundation of China, and the National Key RD Program. Changchun Institute of Optics and Mechanics, Chinese Academy of Sciences, Tianma Microelectronics Co., Ltd., Nanjing Huanxuan Semiconductor Co., Ltd., etc.
